bcp 28, bcp 48 1 oct-20-1999 pnp silicon darlington transistors ? for general af applications ? high collector current ? high current gain ? complementary types: bcp 29/49 (npn) vps05163 1 2 3 4 eha00008 b(1) e(3) c(2,4) type marking pin configuration package bcp 28 bcp 48 bcp 28 bcp 48 1 = b 1 = b 2 = c 2 = c 3 = e 3 = e 4 = c 4 = c sot-223 sot-223 maximum ratings bcp 28 bcp 48 unit parameter symbol collector-emitter voltage 60 v 30 v ceo v cbo 40 80 collector-base voltage 10 emitter-base voltage 10 v ebo dc collector current i c 500 ma 800 ma peak collector current i cm base current i b 100 peak base current i bm 200 w 1.5 total power dissipation , t s = 124 c p tot junction temperature 150 c t j -65 ... 150 storage temperature t st g thermal resistance k/w r thja 75 junction ambient 1) junction - soldering point r thjs 17 1) package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 cu
bcp 28, bcp 48 2 oct-20-1999 electrical characteristics at t a = 25c, unless otherwise specified. parameter values symbol unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 1 ma, i b = 0 bcp 28 bcp 48 v (br)ceo - - 30 60 v - - bcp 28 bcp 48 40 80 collector-base breakdown voltage i c = 100 a, i b = 0 - - - - v (br)cbo emitter-base breakdown voltage i e = 10 a, i c = 0 10 - - v (br)ebo collector cutoff current v cb = 30 v, i e = 0 v cb = 60 v, i e = 0 - - - - na 100 100 bcp 28 bcp 48 i cbo collector cutoff current v cb = 30 v, i e = 0 , t a = 150 c v cb = 60 v, i e = 0 , t a = 150 c - - - - 10 10 a i cbo bcp 28 bcp 48 emitter cutoff current v eb = 4 v, i c = 0 i ebo - 100 na - dc current gain 1) i c = 100 a, v ce = 1 v bcp 28 bcp 48 4000 2000 h fe - - - - - bcp 28 bcp 48 - - dc current gain 1) i c = 10 ma, v ce = 5 v - - - 10000 4000 h fe - - - - 20000 10000 h fe bcp 28 bcp 48 dc current gain 1) i c = 100 ma, v ce = 5 v - - bcp 28 bcp 48 4000 2000 h fe dc current gain 1) i c = 500 ma, v ce = 5 v - - 1) pulse test: t 300 s, d = 2%
bcp 28, bcp 48 3 oct-20-1999 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol unit values min. max. typ. dc characteristics v 1 - - v cesat collector-emitter saturation voltage1) i c = 100 ma, i b = 0.1 ma base-emitter saturation voltage 1) i c = 100 ma, i b = 0.1 ma v besat - - 1.5 ac characteristics - mhz f t - transition frequency i c = 50 ma, v ce = 5 v, f = 100 mhz 200 - collector-base capacitance v cb = 10 v, f = 1 mhz - c cb pf 8 1) pulse test: t 300 s, d = 2%
bcp 28, bcp 48 4 oct-20-1999 total power dissipation p tot = f ( t a *; t s ) * package mounted on epoxy 0 0.4 0 50 100 150 bcp 28/48 ehp00241 ?c 0.6 0.2 t a s t 0.8 1.0 1.2 1.4 w 1.6 p tot t t ; as collector cutoff current i cbo = f ( t a ) v cb = v cemax 0 10 ehp00242 bcp 28/48 a t 150 0 4 10 cbo na 50 100 1 10 2 10 3 10 ? c max typ permissible pulse load p totmax / p totdc = f ( t p ) 10 ehp00244 bcp 28/48 -6 0 10 5 d = 5 10 1 5 10 2 3 10 10 -5 10 -4 10 -3 10 -2 10 0 s 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 tot max tot p dc p p t t p = d t t p t transition frequency f t = f ( i c ) v ce = 5v 10 ehp00243 bcp 28/48 03 10 ma 1 10 3 10 5 10 1 10 2 10 2 c t f mhz
bcp 28, bcp 48 5 oct-20-1999 collector-emitter saturation voltage i c = f ( v cesat ), h fe = 1000 0 10 ehp00247 bcp 28/48 cesat v 1.5 0 3 10 c ma 0.5 1.0 1 10 2 10 ? c v 5 5 150 25 ? c -50 ? c dc current gain h fe = f ( i c ) v ce = 5v 10 ehp00246 bcp 28/48 -1 3 10 ma 3 10 6 10 5 5 10 0 10 1 10 4 c fe h 2 10 5 10 ? c 125 5 25 ? c -55 ? c base-emitter saturation voltage i c = f (v besat ), h fe = 1000 0 10 ehp00249 bcp 28/48 besat v 3.0 0 3 10 c ma 1.0 2.0 1 10 2 10 ? c v 5 5 150 25 ? c -50 ? c collector-base capacitance c cb = f ( v cbo ) emitter-base capacitance c eb = f ( v ebo ) 10 ehp00248 bcp 28/48 -1 1 10 v 10 0 5 10 pf 0 eb0 vv cb0 cb0 c c eb0 () () eb0 c cb0 c
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